cy14b101la cy14b101na 1-mbit (128k x 8/64k x 16) nvsram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 001-42879 rev. *i revised july 5, 2010 1-mbit (128 k x 8/64 k x 16) nvsram features 20 ns, 25 ns, and 45 ns access times internally organized as 128 k x 8 (cy14b101la) or 64 k x 16 (cy14b101na) hands off automatic store on power down with only a small capacitor store to quantumtrap nonvolatile elements initiated by software, device pin, or autostore on power down recall to sram initiated by software or powerup infinite read, write, and recall cycles 1 million store cycles to quantumtrap 20 year data retention single 3 v +20% to -10% operation industrial temperature 32-pin soic, 44-/54-pin tsop-ii, 48-pin ssop and 48-ball fbga packages pb-free and rohs compliance functional description the cypress cy14b101la/cy14b101na is a fast static ram, with a nonvolatile element in each memory cell. the memory is organized as 128 k bytes of 8 bits each or 64 k words of 16 bits each. the embedded nonvolatile elements incorporate quantumtrap technology, producing the world?s most reliable nonvolatile memory. the sram provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable quantumtrap cell. data transfers from the sram to the nonvolatile elements (the store operation) takes place automatically at power down. on powerup, data is restored to the sram (the recall operation) fr om the nonvolatile memory. both the store and recall operations are also available under software control. 6 7 $ 7 , & |